SQJ461EP
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
I DM Limited
100
Limited by R DS(on) *
100 μs
Vishay Siliconix
10
1
I D Limited
1 ms
10 m s
100 ms, 1 s, 10 s, DC
0.1
T C = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1 1 10 100
V D S - Drain-to- S ource Voltage (V)
* V GS > minimum V GS at which R D S (on) i s s pecified
Safe Operating Area
2
1
D u ty Cycle = 0.5
0.2
N otes:
0.1
0.1
0.05
P DM
t 1
t 2
0.01
0.02
Single P u lse
t 1
1. D u ty Cycle, D =
t 2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Sq u are Wave P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2288-Rev. E, 28-Nov-11
5
Document Number: 65541
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQJ469EP-T1-GE3 MOSFET P-CH 80V 32A PPAK 8SOIC
SQJ844EP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SQJ941EP-T1-GE3 MOSFET DUAL P-CH 30V PPAK 8SOIC
SQJ964EP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SQJ970EP-T1-GE3 MOSFET DUAL N-CH 40V PPAK 8SOIC
SQM110N04-02L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N04-03L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N06-04L-GE3 MOSFET N-CH D-S 60V TO263
相关代理商/技术参数
SQJ463EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 40 V (D-S) 175 ?°C MOSFET
SQJ463EP-T1-GE3 功能描述:MOSFET 40V 30A 83W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ465EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 60 V (D-S) 175 ?°C MOSFET
SQJ469EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 80 V (D-S) 175 ?°C MOSFET
SQJ469EP-T1-GE3 功能描述:MOSFET 80V 32A 100W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ500EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N- and P-Channel 40 V (D-S) 175 Celsius MOSFET
SQJ500EP-T1-GE3 功能描述:MOSFET 40V 8A 48W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ840EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 30 V (D-S) 175 ?°C MOSFET